InGaP solar cells fabricated using solid-source molecular beam epitaxy

被引：22

作者：

Sugaya, T. ^{[1
]}

Takeda, A. ^{[1
,2
]}

Oshima, R. ^{[1
]}

Matsubara, K. ^{[1
]}

Niki, S. ^{[1
]}

Okano, Y. ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[2] Tokyo City Univ, Setagaya Ku, Tokyo 1588557, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 378卷

关键词：

Molecular beam epitaxy; Phosphides; Semiconducting indium gallium phosphide; Solar cells; EFFICIENCY; BAND;

D O I：

10.1016/j.jcrysgro.2012.11.008

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the growth conditions for InGaP epitaxial films and the characteristics of InGaP solar cells on a GaAs (100) substrate fabricated using solid-source molecular beam epitaxy. Photoluminescence and X-ray diffraction measurements indicate that a growth temperature of 480 degrees C is suitable for realizing high quality InGaP epitaxial growth with solid-source molecular beam epitaxy. The open circuit voltage of InGaP solar cells grown at 1.0 mu m/h is higher than that of the cells grown at 0.5 mu m/h. The highest conversion efficiency is obtained for an InGaP solar cell grown at 480 degrees C and a growth rate of 1.0 mu m/h. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：576 / 578

页数：3

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