Optical and Nanomechanical Properties of Ga2Se3Single Crystals and Thin Films

被引：2

作者：

Isik, Mehmet ^{[1
]}

Emir, Cansu ^{[1
]}

Gullu, Hasan Huseyin ^{[1
]}

Gasanly, Nizami ^{[2
]}

机构：

[1] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey

[2] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey

来源：

JOM | 2021年 / 73卷 / 02期

关键词：

GA2SE3; NANOINDENTATION;

D O I：

10.1007/s11837-020-04379-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical and nanomechanical properties of Ga(2)Se(3)single crystals and thin films were investigated using reflection, transmission, and nanoindentation measurements. The reflection spectrum recorded in the 525- to 1100-nm range was analyzed to get the band gap energy of the crystal structure, and derivative analysis of the spectrum resulted in band gap energy of 1.92 eV which was attributed to indirect transition. The band gap energy of thermally evaporated Ga(2)Se(3)thin film was determined from the analysis of the transmittance spectrum. The absorption coefficient analysis presented the direct band gap energy as 2.60 eV. The refractive index was investigated in the transparent region using the Wemple-DiDomenico single-oscillator model. Nanoindentation measurements were carried out on the crystal and thin film structures of Ga2Se3. Nanohardness and elastic modulus of the Ga(2)Se(3)single crystals and thin films were calculated following the Oliver-Pharr analysis method.

引用

页码：558 / 565

页数：8

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