Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

被引：38

作者：

Lecourt, Francois ^{[1
]}

Agboton, Alain ^{[1
]}

Ketteniss, Nico ^{[2
]}

Behmenburg, Hannes ^{[2
]}

Defrance, Nicolas ^{[1
]}

Hoel, Virginie ^{[1
]}

Kalisch, Holger ^{[2
]}

Vescan, Andrei ^{[2
]}

Heuken, Michael ^{[3
]}

De Jaeger, Jean-Claude ^{[1
]}

机构：

[1] Univ Lille, Microwave Power Devices Grp, Inst Elect Microelect & Nanotechnol, UMR CNRS 8520, F-59652 Villeneuve Dascq, France

[2] Rhein Westfal TH Aachen, GaN Device Technol, D-52074 Aachen, Germany

[3] AIXTRON SE, D-52134 Herzogenrath, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 08期

关键词：

Gallium alloys; microwave devices; power measurement; semiconductor device fabrication; ALGAN/GAN HEMTS;

D O I：

10.1109/LED.2013.2266123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In0.11Al0.72Ga0.17N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm(2)/V . s, which is the highest value ever reported on In-containing GaN-based HEMTs. For T-shaped gate transistor with a gate length of 75 nm, current gain (f(t)) and power gain (f(max)) cutoff frequencies of 113 and 200 GHz are extracted from S-parameter measurements, respectively. Nonlinear characterization of a T-shaped gate device with a gate length of 225 nm gives an output power density of 2 W/mm at 40 GHz. These results clearly demonstrate the capabilities of such quaternary barrier-based devices.

引用

页码：978 / 980

页数：3

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