Design of CMOS low-noise amplifier for low-band ultra-wideband system

被引：0

作者：

Huang, Zhe-Yang ^{[1
]}

Chen, Chun-Chieh ^{[1
]}

Huang, Che-Cheng ^{[1
]}

Lu, Nan-Ku ^{[1
]}

机构：

[1] Chung Yuan Christian Univ, Dept Elect Engn, Chungli 32023, Taiwan

来源：

2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5 | 2005年

关键词：

RFIC; low-noise amplifier (LNA); shunt-peaked amplifier; ultra-wideband (UWB);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a low-noise amplifier (LNA) is designed for ultra-wideband (UWB) system. The design consists of two shunt-peaked cascode amplifiers and it is fabricated in 0.18um standard RF CMOS process. The LNA gives 18.03dB gain and 1.9GHz 3dB bandwidth (3.1 - 5.0GHz) while consuming 25.92mW through a 1.8V supply. Over the 3.1 - 5.0GHz frequency band, a minimum noise figure of 2.74dB and input return loss lower than -9.6dB have been achieved.

引用

页码：2992 / 2995

页数：4