Design of CMOS low-noise amplifier for low-band ultra-wideband system

被引：0
|
作者：
Huang, Zhe-Yang [1 ]
Chen, Chun-Chieh [1 ]
Huang, Che-Cheng [1 ]
Lu, Nan-Ku [1 ]
机构：
[1] Chung Yuan Christian Univ, Dept Elect Engn, Chungli 32023, Taiwan
来源：
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5 | 2005年
关键词：
RFIC; low-noise amplifier (LNA); shunt-peaked amplifier; ultra-wideband (UWB);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper a low-noise amplifier (LNA) is designed for ultra-wideband (UWB) system. The design consists of two shunt-peaked cascode amplifiers and it is fabricated in 0.18um standard RF CMOS process. The LNA gives 18.03dB gain and 1.9GHz 3dB bandwidth (3.1 - 5.0GHz) while consuming 25.92mW through a 1.8V supply. Over the 3.1 - 5.0GHz frequency band, a minimum noise figure of 2.74dB and input return loss lower than -9.6dB have been achieved.
引用
收藏
页码：2992 / 2995
页数：4
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