LNA Modules for the WR4 (170-260 GHz) Frequency Range

被引：0

作者：

Varonen, M. ^{[1
,3
]}

Samoska, L. ^{[1
]}

Fung, A. ^{[1
]}

Padmanahban, S. ^{[1
]}

Kangaslahti, P. ^{[1
]}

Lai, R. ^{[2
]}

Sarkozy, S. ^{[2
]}

Soria, M. ^{[1
]}

Owen, H. ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, 4800 Oak Grove Dr, Pasadena, CA 91109 USA

[2] Northrop Grumman Corp, Redondo Beach, CA USA

[3] Aalto Univ, Dept Micro & Nanosci, Espoo, Finland

来源：

2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2014年

关键词：

MMICs; LNAs; WR4; E-plane transitions; noise temperature; NOISE AMPLIFIER MODULES; SUBMILLIMETER-WAVE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we report on developments toward ultra-low noise amplifier modules for the WR4 frequency range, covering 170-260 GHz. The amplifiers in question utilize 35 nm HEMT transistors on a 50 mu m thick InP substrate, and were developed at NGC. While recent work in this frequency band has demonstrated the usefulness and advanced technology of utilizing integrated waveguide transitions fabricated on the high dielectric constant MMIC amplifiers themselves, we present evidence here that more standard, cost effective techniques like merging low-loss quartz probes with short wire bonds can provide excellent noise performance, even at these high frequencies. The amplifiers discussed in this paper demonstrate a record 600K noise (4.8 dB) at 220 GHz and 700K (5.2 dB) noise at 240 GHz

引用

页数：4