Wideband CMOS compatible capacitive MEMS switch for RF applications

被引：9
|
作者：
Zhang, Shumin [1 ]
Su, Wansheng [1 ]
Zaghloul, Mona [2 ]
Thibeault, Brian [3 ]
机构：
[1] Hughes Network Syst, LLC, Germantown, MD 20876 USA
[2] George Washington Univ, Dept Elect Engn, Washington, DC 20052 USA
[3] Univ Calif Santa Barbara, Dept Elect Engn, Santa Barbara, CA 93106 USA
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2008年 / 18卷 / 09期
关键词：
capacitive shunt switch; micorelectromechanical system (MEMS) switch; radio frequency (RF)-MEMS; CMOS;
D O I：
10.1109/LMWC.2008.2002455
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents the design, fabrication, and characterization of a novel capacitive radio frequency (RF) microelectromechanical system (MEMS) switch. The switch uses thermal actuation and a finger structure for capacitive coupling. The switch is CMOS process-compatible and uses a two step maskless reactive ion etching (RIE) micromachining technique for post-processing. The measurement results show that the insertion loss is 1.6 dB and isolation is 33 dB at 5.4 GHz. The applications of this switch are ISM/WLAN CMOS front-end reconfigurable RF circuits such as voltage controlled oscillators, filters, and matching networks.
引用
收藏
页码：599 / 601
页数：3
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