New method for observing self-heating effect using transistor efficiency signature

被引：0

作者：

Mori, C. A. B. ^{[1
]}

Agopian, P. G. D. ^{[1
,2
]}

Martino, J. A. ^{[1
]}

机构：

[1] Univ Sao Paulo, PSI, LSI, Sao Paulo, Brazil

[2] Sao Paulo State Univ UNESP, Sao Joao Da Boa Vista, Brazil

来源：

2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2017年

基金：

巴西圣保罗研究基金会;

关键词：

Self-heating effect (SHE); SOI; FinFET;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports a new method for observing the presence of self-heating effect through transistor efficiency (gm/ID) signature from DC measurements, for fast and accurate analysis. This new method is tested first through numerical simulations employing simple analytical models, and then applied experimentally. The transistor efficiencies of short and long channel pFinFETs were used for experimental observation of self-heating effects in this paper. It is possible to see if the self-heating is weak, moderate or strong through the signature format observed on gm/ID versus ID curve.

引用

页数：3