Obtaining of Ni-Mn-Ga magnetic shape memory alloy by annealing electrochemically deposited Ga/Mn/Ni layers

被引：11

作者：

Gaitzsch, Uwe ^{[1
,2
]}

Drache, Jessica ^{[2
,3
]}

McDonald, Ken ^{[2
]}

Muellner, Peter ^{[2
]}

Lindquist, Paul ^{[2
]}

机构：

[1] Leibniz IFW Dresden, D-01171 Dresden, Germany

[2] Boise State Univ, Boise, ID 83725 USA

[3] Tech Univ Dresden, D-01069 Dresden, Germany

来源：

THIN SOLID FILMS | 2012年 / 522卷

关键词：

Magnetic shape memory; Ni-Mn-Ga; Magnetization; Electrodeposition; FIELD-INDUCED STRAINS; MANGANESE; ELECTRODEPOSITION; STABILITY; ADDITIVES; ACTUATION; COATINGS; NI2MNGA; FILMS;

D O I：

10.1016/j.tsf.2012.08.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ni-Mn-Ga thin films are promising candidates for MicroElectroMechanical Systems. Triple-layers of nickel, manganese, and gallium were electrodeposited from chemical solutions on to tungsten and molybdenum refractory metal substrates. These layered films were subsequently annealed at 800 to 900 degrees C to forma Ni-Mn-Ga Heusler alloy by diffusion. To evaluate the quality of the film, the magnetization of the Ni-Mn-Ga film was measured and normalized by the magnetization of nickel, yielding the relative magnetization. Due to the formation of Ni-Mn-Ga during annealing, the relative magnetization was approximately 2 times larger than the tri-layered as-plated film. These results are comparable to bulk Ni-Mn-Ga reference samples. X-ray diffraction measurements confirmed that the material was present as a mixture of L2(1)-ordered austenite as well as modulated 10 M and non modulated martensite with manganese oxide impurities. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：171 / 174

页数：4

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