Impedance spectroscopy of Cu2SnS3 material for photovoltaic applications

被引：15
|
作者：
Essaleh, L. [1 ]
Chehouani, H. [2 ]
Belaqziz, M. [2 ]
Djessas, K. [3 ]
Gauffier, J. L. [4 ]
机构：
[1] Cadi Ayyad Univ, Fac Sci & Technol, Dept Appl Phys, LMCN, Marrakech, Morocco
[2] Cadi Ayyad Univ, Fac Sci & Tech, Dept Appl Phys, LP2M2E, Marrakech, Morocco
[3] Univ Perpignan, Rambla Thermodynam, CNRS, Lab Proc Mat & Energie Solaire PROMES, F-66100 Perpignan, France
[4] INSA Toulouse, Dept Genie Phys, F-31077 Toulouse 4, France
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 85卷
关键词：
Electrical conductivity; Copper ternary compounds; Impedance spectroscopy; VAPOR TRANSPORT TECHNIQUE; DIELECTRIC-PROPERTIES; AC CONDUCTIVITY; SOLAR-CELLS; THIN-FILMS; TEMPERATURE; COPPER; CHALCOGENIDE; CRYSTAL;
D O I：
10.1016/j.spmi.2015.07.007
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The complex impedance spectroscopy in the frequency range 100-1 MHz and temperature range 300-475 K is used to study the electrical properties of the bulk ternary semiconductor compound Cu2SnS3. The dynamic electrical conductivity study shows that correlated barrier hopping model may be appropriate to describe the transport mechanism in our material. The dependences of dielectric parameters by fitting data with Cole-Cole equations on temperature have been discussed in detail. Relaxation time was found to decrease with increasing temperature and to obey the Arrhenius relationship. The values of calculated resistances for bulk were found to be smaller compared with that of grain boundary contributions. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：806 / 812
页数：7
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