An improved transmission line laser model for multimode laser diodes incorporating thermal effects

被引:7
作者
Madhan, M. Ganesh [1 ]
Neelakandan, R. [1 ]
机构
[1] Anna Univ, Dept Elect Engn, Madras 600044, Tamil Nadu, India
关键词
modeling; semiconductor lasers; spectral analysis; thermal effects; transmission line model;
D O I
10.1007/s11082-008-9240-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An improved transmission line model to study the thermal effects in semiconductor laser diodes is reported in this paper. The temperature effects in the laser characteristics are obtained by incorporating temperature dependent gain and carrier density equations for the laser cavity. These primary factors are introduced in the regular transmission line laser model to estimate the static and dynamic characteristics of an 1.3 mu m InGaAsP double heterostructure laser diode. The results show good agreement with the experimental observation and solution of rate equations referred in the literature. The key feature of this model is that it provides the laser spectra at various temperatures. Based on the model, time dependent evolution of optical spectrum, temperature dependent optical output and frequency chirp are evaluated. Further the distribution of photon and electron density within the cavity is also determined.
引用
收藏
页码:535 / 550
页数:16
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