Photoluminescence Analysis of CdS/CIGS Interfaces in CIGS Solar Cells

被引：13

作者：

Chen, Sheng-Hui ^{[1
]}

Lin, Wei-Ting ^{[1
]}

Chan, Shih-Hao ^{[1
]}

Tseng, Shao-Ze ^{[2
]}

Kuo, Chien-Cheng ^{[1
,3
]}

Hu, Sung-Cheng ^{[4
]}

Peng, Wan-Hsuan ^{[4
]}

Lu, Yung-Tien ^{[4
]}

机构：

[1] Natl Cent Univ, Dept Opt & Photon, Chungli 32001, Taiwan

[2] Natl Cent Univ, Opt Sci Ctr, Chungli 32001, Taiwan

[3] Natl Cent Univ, Grad Inst Energy Engn, Chungli 32001, Taiwan

[4] Natl Chung Shan Inst Sci & Technol, Chem Syst Res Div, Lungtan 32599, Taiwan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2015年 / 4卷 / 09期

关键词：

CU(IN; GA)SE-2; THIN-FILMS;

D O I：

10.1149/2.0041509jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, the element diffusion behavior and defect states at the CdS/CIGS interface and their effect on solar cell performance were investigated after post-annealing treatment in an air environment at 150 degrees C and 200 degrees C, respectively. The results showed that the defect states (V-Se and V-Cu) were passivated by the elements of O, S, and Cd forming a new compound CIGSSe, which led to an increase in the band-gap on the CIGS surface and a high carrier concentration at the p-n junction. There was an improvement in the photovoltaic performance of the solar cells from 3.71% to 7.25% through post-annealing treatment at 200 degrees C for 30 min. (C) 2015 The Electrochemical Society. All rights reserved.

引用

页码：P347 / P350

页数：4

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