Microstructures and impedance studies of Bi3.15Nd0.85Ti3O12 thin films

被引：7
作者：
Wu, Di [1 ,2 ]
Li, Aidong [1 ,2 ]
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2009年 / 95卷 / 02期
基金：
中国国家自然科学基金;
关键词：
FERROELECTRIC PROPERTIES; DIELECTRIC CHARACTERIZATION; CONDUCTIVITY; TITANATE;
D O I：
10.1007/s00339-008-4935-y
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Microstructures and impedance characteristics of chemical-solution-derived Bi3.15Nd0.85Ti3O12 thin films were studied as functions of temperature. A dielectric anomaly was found at around 450A degrees C, corresponding to the paraelectric to ferroelectric transition. Via complex impedance studies, grain and grain boundary contributions to the impedance were separated. The resistance of grain and grain boundaries is found governed by the same kind of space charge with an activation energy around 1.1 eV, close to that of oxygen vacancies in perovskite ferroelectrics. The low temperature ac conductance of BNdT thin films shows a frequency dispersion, which can also be ascribed to space charges mainly due to oxygen vacancies. The results were compared with SrBi2Ta2O9 in terms of oxygen vacancy conductivity.
引用
收藏
页码：517 / 521
页数：5
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