Influences of Thermal Annealing Temperatures on Irradiation Induced E′ Centers in Silica Glass

被引：17

作者：

Wang, Tingyun ^{[1
]}

Xiao, Zhongyin ^{[1
]}

Luo, Wenyun ^{[1
]}

机构：

[1] Shanghai Univ, Key Lab Special Fiber Opt & Opt Access Networks, Sch Commun & Informat Engn, Shanghai 200072, Peoples R China

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2008年 / 55卷 / 05期

基金：

美国国家科学基金会;

关键词：

gamma irradiation; E ' concentration; electron spin resonance; optical absorption; thermal annealing;

D O I：

10.1109/TNS.2008.2003439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Influences of pre-irradiation and thermal annealing on E' defect concentration are studied by measuring E' centers and optical absorptions using ESR and spectrophotometer, respectively. The results show that the E' defect concentration decreases significantly when silica glass is pre-irradiated by gamma rays and a subsequent thermal annealing. The effect of thermal annealing on the E' concentration has also been investigated for the temperature from 300 degrees C to 1300 degrees C. It is found from the ESR spectrum that the anti-irradiated property or the silica glass can be improved when the thermal annealing temperature is larger than 700 degrees C. These results have been proved by optical absorption spectra.

引用

页码：2685 / 2688

页数：4

共 16 条

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