We compute the surface dielectric function anisotropy (SDA) and reflectance-difference (RD) spectra of Si(001)(2 x 1):As/Sb surfaces. The calculations are based on the local density approximation (LDA) scheme and utilize a novel set of basis functions, which are the products of plane waves in the surface planes and localized Gaussian functions in the direction normal to the surface. We identify and interpret the SDA and RD spectra in terms of interband transitions, and find that these transitions are mainly related to the electronic surface bands and surface-induced bands. Considering that the calculations based on the LDA of density functional theory (DFT) usually underestimate the band gaps for semiconductors, we make the many-body self-energy correction by shifting the related energy bands and then calculate the dielectric function anisotropy and reflectance difference spectra. We also take into consideration the excitonic and local field effects with a contact-potential model. The final fitted result for Si(001)(2 x 1):As surface is in reasonable agreement with experimental observations. (C) 1999 Elsevier Science B.V. All rights reserved.
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Jozef Stefan Inst, Adv Mat Dept, Jamova 39, Ljubljana 1000, Slovenia
Jozef Stefan Int Postgrad Sch, Jamova 39, Ljubljana 1000, SloveniaJozef Stefan Inst, Adv Mat Dept, Jamova 39, Ljubljana 1000, Slovenia
Potocnik, Tjasa Parkelj
Zupanic, Erik
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Jozef Stefan Inst, Condensed Matter Phys Dept, Jamova 39, Ljubljana 1000, SloveniaJozef Stefan Inst, Adv Mat Dept, Jamova 39, Ljubljana 1000, Slovenia
Zupanic, Erik
Tong, Wen-Yi
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Univ Liege, Theoret Mat Phys, Q MAT, CESAM, B-4000 Liege, BelgiumJozef Stefan Inst, Adv Mat Dept, Jamova 39, Ljubljana 1000, Slovenia
Tong, Wen-Yi
Bousquet, Eric
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Univ Liege, Theoret Mat Phys, Q MAT, CESAM, B-4000 Liege, BelgiumJozef Stefan Inst, Adv Mat Dept, Jamova 39, Ljubljana 1000, Slovenia
Bousquet, Eric
Fernandez, Daniel Diaz
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Jozef Stefan Inst, Adv Mat Dept, Jamova 39, Ljubljana 1000, SloveniaJozef Stefan Inst, Adv Mat Dept, Jamova 39, Ljubljana 1000, Slovenia
Fernandez, Daniel Diaz
Koster, Gertjan
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Jozef Stefan Inst, Adv Mat Dept, Jamova 39, Ljubljana 1000, Slovenia
Univ Twente, Fac Sci & Technol, POB 217, NL-7500 AE Enschede, Netherlands
Univ Twente, MESA Inst Nanotechnol, POB 217, NL-7500 AE Enschede, NetherlandsJozef Stefan Inst, Adv Mat Dept, Jamova 39, Ljubljana 1000, Slovenia
Koster, Gertjan
Ghosez, Philippe
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Univ Liege, Theoret Mat Phys, Q MAT, CESAM, B-4000 Liege, BelgiumJozef Stefan Inst, Adv Mat Dept, Jamova 39, Ljubljana 1000, Slovenia
Ghosez, Philippe
Spreitzer, Matjaz
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Jozef Stefan Inst, Adv Mat Dept, Jamova 39, Ljubljana 1000, SloveniaJozef Stefan Inst, Adv Mat Dept, Jamova 39, Ljubljana 1000, Slovenia