Anomalous Electrical Resistivity of CeRh2Si2 near the Pressure-Induced Quantum Critical Point

The electrical resistivity of single crystalline CeRh2Si2 has been measured at high pressure up to 8 GPa, low temperature down to 2.0 K and high magnetic field up to 9T. The rho(T) curve is fitted by the formula rho(T)= rho(0) + AT(n) at low-temperature. While the power a. shows almost constant vahie 2 in a wide pressure range, it is found that A(P) shows an anomaly near P01-1.0 GPa and po(P) near P-C2 similar to 0.6 GPa, both of which corresponds the pressures where the magnetic ordering phases disappear. On the other hand, the magnitude of the magnetoresistance, Delta R(P, H = 9T)R(P) at 4.2 K, shows a sudden decrease near P-C2. These results are discussed on the basis of pressure-induced quantum phase transition.