Resistance switching properties of sol-gel derived La0.67Ca0.33MnO3 thin films on F-doped SnO2 conducting glass

被引：28

作者：

Zhang, Ting ^{[1
]}

Su, Zhaohui ^{[1
]}

Chen, Hongju ^{[1
]}

Ding, Linghong ^{[1
]}

Zhang, Weifeng ^{[1
]}

机构：

[1] Henan Univ, Sch Phys & Elect, Key Lab Photon Tech Informat, Kaifeng 475004, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 17期

关键词：

Manganese compounds;

D O I：

10.1063/1.3011029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electric-pulse-induced resistance switching of the Au-La0.67Ca0.33MnO3(LCMO)-FTO (fluorine-doped tin oxide) heterostructures was studied by electrochemical workstation. A distinct current-voltage characteristic of the device with pronounced reproducible nonlinearity, asymmetry, and hysteresis was observed at room temperature. The current-voltage characteristics suggest a Poole-Frenkel and space-charge-limited current type mechanism controlled by Au/LCMO interface traps. The resistance switching behavior shows obvious multilevel resistance switching. The present results suggest a possible application of Ag-LCMO-FTO system as multilevel memory devices. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3011029]

引用

页数：3

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