High-Temperature 1.3 μm InAs/GaAs Quantum Dot Lasers on Si Substrates Fabricated by Wafer Bonding

We present 1.3 mu m InAs/GaAs quantum dot lasers on Si substrates operating at high temperatures. Our lasers are fabricated through epitaxial growth on GaAs substrates of the InAs/GaAs quantum dot laser double heterostructure, and subsequent GaAs/Si wafer bonding and layer transfer onto Si substrates. Both of the on-Si lasers by direct- and metal-mediated bonding exhibit lasing temperatures over 100 degrees C. Partial p-type doping in the InAs/GaAs quantum dot core layer is found to significantly increase the characteristics temperature T-0. This result verifies the suitability of III-V quantum dot lasers as a light source in Si photonic integrated circuits. (C) 2013 The Japan Society of Applied Physics