Investigation of germanium Raman lasers for the mid-infrared

被引：14

作者：

De Leonardis, Francesco ^{[1
]}

Troia, Benedetto ^{[1
]}

Soref, Richard A. ^{[2
,3
]}

Passaro, Vittorio M. N. ^{[1
]}

机构：

[1] Politecn Bari, Dipartimento Ingn Elettr & Informaz, Photon Res Grp, I-70125 Bari, Italy

[2] Univ Massachusetts, Dept Phys, Boston, MA 02125 USA

[3] Univ Massachusetts, Engn Program, Boston, MA 02125 USA

来源：

OPTICS EXPRESS | 2015年 / 23卷 / 13期

基金：

英国工程与自然科学研究理事会;

关键词：

ALL-OPTICAL MODULATION; WAVE-GUIDES; SILICON; PHOTONICS;

D O I：

10.1364/OE.23.017237

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper we present a detailed theoretical investigation of integrated racetrack Raman lasers based on the germanium material system operating in the mid-infrared beyond the germanium two-photon absorption cut-off wavelength of 3.17 mu m. The effective Raman gain has been estimated in waveguides based on germanium-on-silicon, germanium-on-SOI and germanium-on-Si3N4 technology platforms as a function of their crystallographic orientations. Furthermore, general design guidelines have been determined by means of a comparative analysis of Raman laser performance, i.e. the threshold power, polarization and directionality of the excited Stokes signals as a function of racetrack cavity length and directional-coupler dimensions. Finally, the emitted Raman laser power has been evaluated as a function of overall propagation losses and operative wavelengths up to 3.8 mu m, while the time dynamics of Raman lasers has been simulated assuming continuous and pulse waves as input pump signals. (C) 2015 Optical Society of America

引用

页码：17237 / 17254

页数：18

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