Investigation of germanium Raman lasers for the mid-infrared

被引:14
作者
De Leonardis, Francesco [1 ]
Troia, Benedetto [1 ]
Soref, Richard A. [2 ,3 ]
Passaro, Vittorio M. N. [1 ]
机构
[1] Politecn Bari, Dipartimento Ingn Elettr & Informaz, Photon Res Grp, I-70125 Bari, Italy
[2] Univ Massachusetts, Dept Phys, Boston, MA 02125 USA
[3] Univ Massachusetts, Engn Program, Boston, MA 02125 USA
基金
英国工程与自然科学研究理事会;
关键词
ALL-OPTICAL MODULATION; WAVE-GUIDES; SILICON; PHOTONICS;
D O I
10.1364/OE.23.017237
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this paper we present a detailed theoretical investigation of integrated racetrack Raman lasers based on the germanium material system operating in the mid-infrared beyond the germanium two-photon absorption cut-off wavelength of 3.17 mu m. The effective Raman gain has been estimated in waveguides based on germanium-on-silicon, germanium-on-SOI and germanium-on-Si3N4 technology platforms as a function of their crystallographic orientations. Furthermore, general design guidelines have been determined by means of a comparative analysis of Raman laser performance, i.e. the threshold power, polarization and directionality of the excited Stokes signals as a function of racetrack cavity length and directional-coupler dimensions. Finally, the emitted Raman laser power has been evaluated as a function of overall propagation losses and operative wavelengths up to 3.8 mu m, while the time dynamics of Raman lasers has been simulated assuming continuous and pulse waves as input pump signals. (C) 2015 Optical Society of America
引用
收藏
页码:17237 / 17254
页数:18
相关论文
共 26 条
[1]  
[Anonymous], 2005, Comsol Multiphysics: User's Guide
[2]   Silicon-on-sapphire integrated waveguides for the mid-infrared [J].
Baehr-Jones, Tom ;
Spott, Alexander ;
Ilic, Rob ;
Spott, Andrew ;
Penkov, Boyan ;
Asher, William ;
Hochberg, Michael .
OPTICS EXPRESS, 2010, 18 (12) :12127-12135
[3]   Nonlinear optical response of low loss silicon germanium waveguides in the mid-infrared [J].
Carletti, L. ;
Ma, P. ;
Yu, Y. ;
Luther-Davies, B. ;
Hudson, D. ;
Monat, C. ;
Orobtchouk, R. ;
Madden, S. ;
Moss, D. J. ;
Brun, M. ;
Ortiz, S. ;
Labeye, P. ;
Nicoletti, S. ;
Grillet, C. .
OPTICS EXPRESS, 2015, 23 (07) :8261-8271
[4]   STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J].
CERDEIRA, F ;
BUCHENAUER, CJ ;
CARDONA, M ;
POLLAK, FH .
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :580-+
[5]   Low-loss germanium strip waveguides on silicon for the mid-infrared [J].
Chang, Yu-Chi ;
Paeder, Vincent ;
Hvozdara, Lubos ;
Hartmann, Jean-Michel ;
Herzig, Hans Peter .
OPTICS LETTERS, 2012, 37 (14) :2883-2885
[6]   Thermal and stress influence on performance of SOI racetrack resonator Raman lasers [J].
De Leonardis, F. ;
Troia, B. ;
Campanella, C. E. ;
Passaro, V. M. N. .
JOURNAL OF OPTICS, 2014, 16 (08)
[7]   Design Rules for Raman Lasers Based on SOI Racetrack Resonators [J].
De Leonardis, F. ;
Troia, B. ;
Passaro, V. M. N. .
IEEE PHOTONICS JOURNAL, 2013, 5 (06)
[8]   Mid-IR Optical and Nonlinear Properties of Germanium on Silicon Optical Waveguides [J].
De Leonardis, Francesco ;
Troia, Benedetto ;
Passaro, Vittorio M. N. .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2014, 32 (22) :3747-3757
[9]   Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys [J].
Fournier-Lupien, J. -H. ;
Mukherjee, S. ;
Wirths, S. ;
Pippel, E. ;
Hayazawa, N. ;
Mussler, G. ;
Hartmann, J. M. ;
Desjardins, P. ;
Buca, D. ;
Moutanabbir, O. .
APPLIED PHYSICS LETTERS, 2013, 103 (26)
[10]   The third-order nonlinear optical coefficients of Si, Ge, and Si1-xGex in the midwave and longwave infrared [J].
Hon, Nick K. ;
Soref, Richard ;
Jalali, Bahram .
JOURNAL OF APPLIED PHYSICS, 2011, 110 (01)