Molecular three-terminal devices: fabrication and measurements

被引:81
|
作者
van der Zant, HSJ
Kervennic, YV
Poot, M
O'Neill, K
de Groot, Z
Thijssen, JM
Heersche, HB
Stuhr-Hansen, N
Bjornholm, T
Vanmaekelbergh, D
van Walree, CA
Jenneskens, LW
机构
[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands
[2] Univ Copenhagen, Nanosci Ctr, DK-2100 Copenhagen O, Denmark
[3] Univ Copenhagen, Dept Chem, DK-2100 Copenhagen O, Denmark
[4] Univ Utrecht, Debye Inst, NL-3584 CC Utrecht, Netherlands
[5] Univ Utrecht, Debye Inst, NL-3584 CH Utrecht, Netherlands
关键词
D O I
10.1039/b506240n
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Incorporation of a third, gate electrode in the device geometry of molecular junctions is necessary to identify the transport mechanism. At present, the most popular technique to fabricate three-terminal molecular devices makes use of electromigration. Although it is a statistical process, we show that control over the gap resistance can be obtained. A detailed analysis of the current-voltage characteristics of gaps without molecules, however, shows that they reveal features that can mistakenly be attributed to molecular transport. This observation raises questions about which gaps with molecules can be disregarded and which not. We show that electrical characteristics can be controlled by the rational design of the molecular bridge and that vibrational modes probed by electrical transport are of potential interest as molecular fingerprints.
引用
收藏
页码:347 / 356
页数:10
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