Effect of substrate bias on the performance and reliability of the split-gate source-side injected flash memory

被引：5
|
作者：
Huang, KC [1 ]
Fang, YK
Yaung, DN
Chen, CW
Sung, HC
Kuo, DS
Wang, CS
Liang, MS
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, VLSI Technol Lab, Tainan 70101, Taiwan
[2] Ming Hsin Inst Technol, Hsinchu 304, Taiwan
[3] Taiwan Semicond Mfg Co Ltd, Hsinchu, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 08期
关键词：
negative substrate bias; source-side injection; split-gate EEPROM/Flash;
D O I：
10.1109/55.778161
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of the substrate bias on the characteristics of split-gate EEPROM/Flash memory cells have been investigated. It is experimentally demonstrated that applying negative substrate bias (NSB) can improve the programming and erasing speed significantly, The improvements can be attributed that NSB effectively increase the needed electrical fields for fast programming and erasing, respectively. Furthermore, the cycling endurance is improved considerably if NSB is applied for programming and erasing operation both.
引用
收藏
页码：412 / 414
页数：3
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