Sputtering of Spindt-type Field Emission Tip induced by Electron Stimulated Desorption of Gate Contaminations

被引：0

作者：

Zheng, Tao ^{[1
]}

Zhang, Bo ^{[1
]}

Gnade, Bruce ^{[2
]}

机构：

[1] Univ Texas Dallas, Mat Sci Dept, Richardson, TX 75080 USA

[2] Southern Methodist Univ, Lyle Sch Engn, Dallas, TX 75275 USA

来源：

2017 30TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) | 2017年

关键词：

Field emission; Spindt; sputtering; tip sharpening; emission stability;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The sputtering of Mo Spindt emitter due to the gate absorbent are observed when nA level emission current is collected by the gate for a duration of tens of seconds under a vacuum of 1x10(-7) Torr.

引用

页码：24 / 25

页数：2

共 4 条

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APPLIED SURFACE SCIENCE, 1999, 146 (1-4) : 182 - 186
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[3] Electrophoresis deposition and field emission characteristics of planar-gate-type electron source with carbon nanotubes
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[4] Optical Control of Young's Type Double-slit Interferometer for Laser-induced Electron Emission from a Nano-tip
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Hafner, Christian
Schoetz, Johannes
Osterwalder, Juerg
Kling, Matthias F.
SCIENTIFIC REPORTS, 2017, 7

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