Nearest-neighbor distance distribution of diamond nuclei on substrate surfaces

被引:6
作者
Ascarelli, P
Cappelli, E
Pinzari, F
机构
[1] Consiglio Nazionale delle Ricerche, Ist. Metoclologie Avanzate I., 00016 Monterotondo Scalo, Rome
关键词
D O I
10.1063/1.118673
中图分类号
O59 [应用物理学];
学科分类号
摘要
The origin of a nucleation density depletion around each diamond nucleus on a Si substrate surface is here related to a deformation zone induced by the diamond-substrate lattice misfit. This phenomenon determines a limitation on the maximum nucleation density obtainable. (C) 1997 American Institute of Physics.
引用
收藏
页码:1697 / 1699
页数:3
相关论文
共 8 条
  • [1] ANALYSIS AND MODELING OF DIAMOND HETEROGENEOUS NUCLEATION KINETICS
    ASCARELLI, P
    FONTANA, S
    [J]. DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) : 990 - 996
  • [2] DISSIMILAR GRIT-SIZE DEPENDENCE OF THE DIAMOND NUCLEATION DENSITY ON SUBSTRATE SURFACE PRETREATMENTS
    ASCARELLI, P
    FONTANA, S
    [J]. APPLIED SURFACE SCIENCE, 1993, 64 (04) : 307 - 311
  • [3] THE EQUILIBRIUM OF CRYSTAL SURFACES
    CABRERA, N
    [J]. SURFACE SCIENCE, 1964, 2 : 320 - 345
  • [4] DOREMUS RH, 1985, RATES PHASE TRANSFOR, P24
  • [5] HETEROEPITAXIAL DIAMOND FILMS ON SILICON(001) - INTERFACE STRUCTURE AND CRYSTALLOGRAPHIC RELATIONS BETWEEN FILM AND SUBSTRATE
    JIA, CL
    URBAN, K
    JIANG, X
    [J]. PHYSICAL REVIEW B, 1995, 52 (07): : 5164 - 5171
  • [6] NUCLEATION AND INITIAL GROWTH-PHASE OF DIAMOND THIN-FILMS ON (100)-SILICON
    JIANG, X
    SCHIFFMANN, K
    KLAGES, CP
    [J]. PHYSICAL REVIEW B, 1994, 50 (12): : 8402 - 8410
  • [7] KITTEL C, 1971, INTRO SOLID STATE PH, P678
  • [8] CHARACTERIZATION OF BIAS-ENHANCED NUCLEATION OF DIAMOND ON SILICON BY INVACUO SURFACE-ANALYSIS AND TRANSMISSION ELECTRON-MICROSCOPY
    STONER, BR
    MA, GHM
    WOLTER, SD
    GLASS, JT
    [J]. PHYSICAL REVIEW B, 1992, 45 (19): : 11067 - 11084