Radical-free dynamic nuclear polarization using electronic defects in silicon

被引：29

作者：

Cassidy, M. C. ^{[1
]}

Ramanathan, C. ^{[2
]}

Cory, D. G. ^{[3
,4
,5
]}

Ager, J. W. ^{[6
]}

Marcus, C. M. ^{[7
,8
]}

机构：

[1] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA

[2] Dartmouth Coll, Dept Phys & Astron, Hanover, NH 03755 USA

[3] Univ Waterloo, Dept Chem, Waterloo, ON N2L 3G1, Canada

[4] Univ Waterloo, Inst Quantum Comp, Waterloo, ON N2L 3G1, Canada

[5] Perimeter Inst Theoret Phys, Waterloo, ON N2L 2Y5, Canada

[6] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[7] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[8] Univ Copenhagen, Niels Bohr Inst, Ctr Quantum Devices, DK-2100 Copenhagen, Denmark

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 16期

基金：

新加坡国家研究基金会; 美国国家科学基金会;

关键词：

ENHANCED NMR-SPECTROSCOPY; SOLID-STATE; CORE;

D O I：

10.1103/PhysRevB.87.161306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Direct dynamic nuclear polarization of H-1 nuclei in frozen water and water-ethanol mixtures is demonstrated using silicon nanoparticles as the polarizing agent. Electron spins at dangling-bond sites near the silicon surface are identified as the source of the nuclear hyperpolarization. This polarization method opens avenues for the fabrication of surface engineered nanostructures to create high nuclear spin polarized solutions without introducing contaminating radicals, and for the study of molecules adsorbed onto surfaces. DOI: 10.1103/PhysRevB.87.161306

引用

页数：4

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