Influence of Light Impurities on the Crystal-Melt Interface Velocity in Ni and Ag. Molecular Dynamics Simulation

被引:16
|
作者
Poletaev, G. M. [1 ]
Zorya, I., V [2 ]
机构
[1] Polzunov Altai State Tech Univ, Barnaul 656038, Russia
[2] Siberian State Ind Univ, Novokuznetsk 654007, Russia
关键词
molecular dynamics; metal; crystallization; impurity; crystal-melt interface; POTENTIALS; METALS; ATOMS;
D O I
10.1134/S1063785020060231
中图分类号
O59 [应用物理学];
学科分类号
摘要
The influence of impurities of light elements (C, N, and O) on the crystal-melt interface velocity in fcc metals (Ni and Ag) has been investigated by the molecular dynamics method. Dependences of the crystallization rate on the impurity concentration are obtained. It is shown that the presence of impurities reduces significantly the crystal-melt interface velocity in metals. Impurity atoms induce local lattice strain, which leads to deceleration of the crystal-melt interface; as a rule, the stronger this strain is, the more significant the deceleration of the crystal-melt interface by impurity atoms is.
引用
收藏
页码:575 / 578
页数:4
相关论文
共 50 条