MicroRaman Spectroscopy of Si Nanowires: Influence of Size

被引：2

作者：

Anaya, J. ^{[1
]}

Prieto, C. ^{[1
]}

Torres, A. ^{[1
]}

Martin-Martin, A. ^{[1
]}

Souto, J. ^{[1
]}

Jimenez, J. ^{[1
]}

Rodriguez, A. ^{[2
]}

Rodriguez, T. ^{[2
]}

机构：

[1] Univ Valladolid, GdS Optronlab, Dpto Fis Mat Condensada, Ed I D, Paseo de Belen 1, E-47011 Valladolid, Spain

[2] Univ Politecn Madrid, ETSIT, Tecnol Elect, Madrid 28040, Spain

来源：

DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV | 2012年 / 725卷

关键词：

Nanowires; Raman spectroscopy; Si; Temperature; SILICON;

D O I：

10.4028/www.scientific.net/MSF.725.255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si Nanowires (NWs) were studied by Raman microspectroscopy. The Raman spectrum of the NWs reveals important thermal effects, which broaden and shift the one phonon Raman bands. The low thermal conductivity of the NWs and the low thermal dissipation are responsible for the temperature enhancement in the NW under the excitation with the laser beam. We have modeled, using finite element methods, the interaction between the laser beam and the NWs. The Raman spectrum of Si NWs is interpreted in terms of the temperature induced by the laser beam excitation, in correlation with finite element methods (fem) for studying the interaction between the laser beam and the NWs.

引用

页码：255 / +

页数：2

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