Exploring the Use of Emerging Nonvolatile Memory Technologies in Future FPGAs

被引:2
|
作者
Pan, Yangyang [1 ]
Li, Yiran [1 ]
Sun, Hongbin [2 ]
Xu, Wei [3 ]
Zheng, Nanning [2 ]
Zhang, Tong [1 ]
机构
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[2] Xi An Jiao Tong Univ, Inst Artificial Intelligence & Robot, Xian 710049, Peoples R China
[3] Marvell Technol, Santa Clara, CA 95050 USA
基金
中国国家自然科学基金;
关键词
Dynamic random-access memory (DRAM); field-programmable gate arrays (FPGA); magnetoresistive random-access memory (MRAM); nonvolatile memory; RANDOM-ACCESS MEMORY;
D O I
10.1109/TVLSI.2012.2195786
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
As new nonvolatile memory technologies become increasingly mature, there has been a growing interest on investigating their use in future field-programmable gate arrays (FPGAs). Similar to existing FPGAs with embedded Flash memory, future FPGAs can embed these new nonvolatile memories to persistently store configuration data. By comparing with prior work, we first propose the more appropriate design style for new nonvolatile configuration data storage memory. Moreover, this brief studies a dynamic random-access memory (DRAM)-based FPGA design strategy enabled by high-density embedded nonvolatile memory. Existing FPGAs do not use on-chip DRAM cells for configuration data storage mainly because DRAM self-refresh involves destructive DRAM read. This problem can be solved, if we use embedded nonvolatile memory as primary FPGA configuration data storage and externally refresh on-chip DRAM cells. Analysis and simulations have been carried out to demonstrate the potential advantages of such a design strategy.
引用
收藏
页码:771 / 775
页数:5
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