Observation of Threading Dislocations in Ammonothermal Gallium Nitride Single Crystal Using Synchrotron X-ray Topography

被引：30

作者：

Yao, Y. ^{[1
]}

Ishikawa, Y. ^{[1
]}

Sugawara, Y. ^{[1
]}

Takahashi, Y. ^{[2
]}

Hirano, K. ^{[2
]}

机构：

[1] JFCC, Nagoya, Aichi 4568587, Japan

[2] High Energy Accelerator Res Org KEK, 1-1 Ooho, Tsukuba, Ibaraki 3050801, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2018年 / 47卷 / 09期

基金：

日本科学技术振兴机构;

关键词：

GaN; ammonothermal; dislocation; synchrotron x-ray topography; Burgers vector;

D O I：

10.1007/s11664-018-6252-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Synchrotron monochromatic-beam x-ray topography observation has been performed on high-quality ammonothermal gallium nitride single crystal to evaluate threading dislocations (TD) in a nondestructive manner. Asymmetric diffractions with six equivalent g-vectors of 11-26, in addition to a symmetric diffraction with g = 0008, were applied to determine the Burgers vectors (b) of dislocations. It was found that pure edge-type TDs with b = < 11 - 20 > / 3 did not exist in the sample. A dominant proportion of TDs were of mixed type with b = < 11 - 20 > /3 + < 0001 >, i. e., so-called c + a dislocations. Pure 1c screw dislocations with b = < 0001 > and TDs with c-component larger than 1c were also observed.

引用

页码：5007 / 5012

页数：6

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