Excitonic and impurity-related optical transitions in Be δ-doped GaAs/AlAs multiple quantum wells:: Fractional-dimensional space approach -: art. no. 235322

被引：40

作者：

Kundrotas, J

Cerskus, A

Asmontas, S

Valusis, G

Sherliker, B

Halsall, MP

Steer, MJ

Johannessen, E

Harrison, P

机构：

[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

[2] Univ Manchester, Sch Elect & Elect Engn, Manchester M60 1QD, Lancs, England

[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JJD, S Yorkshire, England

[4] Microtech Innovat, N-3184 Borre, Norway

[5] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.72.235322

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the optical transitions in Be delta-doped GaAs/AlAs multiple quantum wells with various width and doping levels. The fractional dimensionality model was extended to describe free-electron-acceptor (free hole-donor) transitions in a quantum well. The measured photoluminescence spectra from the samples were interpreted within the framework of this model, and acceptor-impurity induced effects in the photoluminescence line shapes from multiple quantum wells of different widths were demonstrated.

引用

页数：11

共 95 条

[1] EFFECTS OF BAND NONPARABOLICITY ON 2-DIMENSIONAL ELECTRON-GAS [J].