Ellipsometric analysis of ion-implanted polycrystalline silicon films before and after annealing

被引：24
作者：
Lioudakis, E
Nassiopoulou, A
Othonos, A
机构：
[1] Univ Cyprus, Dept Phys, CY-1678 Nicosia, Cyprus
[2] NCSR Demokritos, IMEL, Athens 15310, Greece
来源：
THIN SOLID FILMS | 2006年 / 496卷 / 02期
关键词：
ellipsometry; ion implantation; annealing; polycrystalline silicon;
D O I：
10.1016/j.tsf.2005.08.339
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A study of arsenic ion-implanted polycrystalline silicon films before and after annealing at various temperatures has been performed using spectroscopic ellipsometry in the ultraviolet to the visible spectral region. Using the Bruggeman effective medium approximation, an optical/structural model is presented for all the annealed samples explaining the measurements. Ellipsometric measurements reveal important structural changes as a function of annealing temperature which provide an interesting inside into the annealing kinetics of ion-implanted polycrystalline silicon films. This work also demonstrates the importance of spectroscopic ellipsometry in determining non-destructively the dielectric functions ill materials that have undergone complex processing. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：253 / 258
页数：6
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