This paper presents a high-voltage emission driver chiplet for inorganic micro-pixelated light-emitting-diode (mu LED) displays in a standard 0.18-mu m CMOS technology. Different from the conventional driving scheme of the active-matrix organic light-emitting-diode display, which places the scan drivers and emission drivers at the panel bezels, the CMOS driver chiplets are proposed to sit on the glass substrate among mu LEDs. The high-voltage swing buffers in the CMOS chiplet are used to drive the low-temperature poly-silicon thin-film transistors on glass backplane to enable the emission control of 300 mu LEDs. A single CMOS chiplet has 20 output channels, each offering 16M-color depth with 256 grey levels realized by an 8-bit digital-to-analog converter. The maximum channel current is 247 mu A and the TFT-gate-driving voltage is 15 V.