High performance interband cascade lasers at 3.8 microns

被引：18

作者：

Leavitt, R. P. ^{[1
]}

Bruno, J. D. ^{[1
]}

Bradshaw, J. L. ^{[1
]}

Lascola, K. M. ^{[1
]}

Pham, J. T. ^{[1
]}

Towner, F. J. ^{[1
]}

Suchalkin, S. ^{[2
]}

Belenky, G. ^{[2
]}

Vurgaftman, I. ^{[3
]}

Canedy, C. L. ^{[3
]}

Bewley, W. W. ^{[3
]}

Kim, C. S. ^{[3
]}

Kim, M. ^{[4
]}

Merritt, C. D. ^{[3
]}

Meyer, J. R. ^{[3
]}

机构：

[1] Maxion Technol Inc, College Pk, MD 20740 USA

[2] SUNY Stony Brook, Stony Brook, NY 11790 USA

[3] U S Naval Res Lab, Washington, DC 98020 USA

[4] Sotera Def Solut Inc, Herndon, VA 78746 USA

来源：

NOVEL IN-PLANE SEMICONDUCTOR LASERS XI | 2012年 / 8277卷

关键词：

Interband Cascade Lasers; Mid-IR Lasers; Semiconductor Lasers; Infrared Countermeasures; Chemical Sensing; Free-Space Communications; ROOM-TEMPERATURE;

D O I：

10.1117/12.910586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An interband cascade laser design has been grown by molecular beam epitaxy using uncracked arsenic and antimony sources. Lasers were fabricated into both broad-area and narrow-ridge devices, with cavity lengths ranging between 1 mm and 4 mm. At 300K, under low-duty-cycle pulsed conditions, threshold current densities for lasers with 2-mm cavity lengths are as low as 395 A/cm(2), with optical emission centered at a wavelength of similar to 3.82 mu m at 300 K. Continuous-wave (cw) performance of the narrow-ridge devices has been achieved for temperatures up to almost 60 degrees C. We present results of both pulsed (broad-area and ridge) and cw (ridge only) measurements on these lasers, including L-I-V, spectral, cavity-length, and Hakki-Paoli analyses.

引用

页数：12

共 13 条

[1]

Bandyopadhyay N., 2010, APPL PHYS LETT, V97

[2] Ridge-width dependence of midinfrared interband cascade laser characteristics [J].