Numerical Modelling of Electrical Behaviour of Semiconductor-Based Micro-Sensors for Copper Ions Detection

被引：3

作者：

Chermiti, J. ^{[1
,2
]}

Ben Ali, M. ^{[1
,3
]}

Jaffrezic-Renault, N. ^{[4
]}

机构：

[1] Univ Tunis Carthage, Unite Rech Phys Semicond, IPEST, Tunis 2070, Tunisia

[2] Univ Sousse, Inst Super Sci Appl & Technol Sousse Cite Etttafe, Sousse 4003, Tunisia

[3] Univ Tunis Carthage, Inst Preparatoire Etud Ingenieur Nabeul Mrezgua N, Tunis 8000, Tunisia

[4] Univ Lyon 1, Lab Analyt Sci, F-69622 Villeurbanne, France

来源：

SENSOR LETTERS | 2011年 / 9卷 / 06期

关键词：

Ion Sensitive Sensors; EIS and ISFET Structures; Cu2+; Thiacalix-4-Arene; Site Binding Model; SPICE Model; THIN-FILMS; ZNO FILMS; ISFET;

D O I：

10.1166/sl.2011.1757

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The design and investigation of electronic micro systems oriented towards environmental and biological monitoring, requires more accurate PC-based simulation tools to predict and model properly the sensor characteristics. This paper describes a user-friendly platform allowing prediction of behaviors of chemical sensors based on semiconductor technology (EIS structure and ISFET) in order to optimize the geometry of micro-sensors. In addition, it enables the extraction of both microscopic and macroscopic parameters which define the sensor recognition properties.

引用

页码：2339 / 2342

页数：4

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