Single electron transistors with high-quality superconducting niobium islands

被引：20

作者：

Dolata, R ^{[1
]}

Scherer, H ^{[1
]}

Zorin, AB ^{[1
]}

Niemeyer, J ^{[1
]}

机构：

[1] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 15期

关键词：

D O I：

10.1063/1.1465526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep submicron Al/AlOx/Nb tunnel junctions and single electron transistors with niobium islands were fabricated by electron beam gun shadow evaporation. Using stencil masks consisting of the thermostable polymer polyethersulfone and germanium, high quality niobium structures with good superconducting properties and a gap energy of up to 2Delta(Nb)=2.5 meV were achieved. The I(U) characteristics of the transistors show special features due to tunneling of single Cooper pairs and significant gate modulation in both the superconducting and the normal state. (C) 2002 American Institute of Physics.

引用

页码：2776 / 2778

页数：3

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