Photoconductivity and highly selective ultraviolet sensing features of amorphous silicon carbon nitride thin films - art. no. 073515

被引：8

作者：

Chen, CW ^{[1
]}

Huang, CC

Lin, YY

Su, WF

Chen, LC

Chen, KH

机构：

[1] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10764, Taiwan

[3] Acad Sinica, Inst Atom & Mol Sci, Taipei, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 07期

关键词：

D O I：

10.1063/1.2178406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoconductivity of amorphous silicon carbon nitride (a-SiCN) as a function of incident photon energies has been studied. A metal-semiconductor-metal photodetector device based on the a-SiCN thin film demonstrates excellent selective ultraviolet sensing features. A large photo-to-dark current ratio about 5000 and a relative quantum efficiency about similar to 10(5) under illumination of the 250 nm light source and a bias voltage of 5 V were observed. A model based on the heterogeneous structure in the a-SiCN thin film which consists of pi-pi(*) bands and sigma-sigma(*) bands was introduced to account for the observed photoconductive transport properties. (c) 2006 American Institute of Physics.

引用

页数：3

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