Photodetection Frequency Response Characterization for High-Speed Ge-PD on Si With an Equivalent Circuit

被引：0

作者：

Lee, Jeong-Min ^{[1
]}

Kim, Minkyu ^{[1
]}

Lischke, Stefan ^{[2
]}

Zimmernman, Lars ^{[2
]}

Cho, Seong-Ho ^{[3
]}

Choi, Woo-Young ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul, South Korea

[2] IHP, Technol Pk 25, D-15326 Frankfurt, Oder, Germany

[3] Samsung Adv Inst Technol, Mobile Hlth Care Grp, Suwon, Gyeongi Do, South Korea

来源：

2016 21ST OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) HELD JOINTLY WITH 2016 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING (PS) | 2016年

基金：

新加坡国家研究基金会;

关键词：

Germanium photodetector; equivalent circuit model; Silicon photonics;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We characterize photodetection frequency response of a waveguide-type Ge-PD on Si having larger than 50-GHz photodetection bandwidth using an equivalent circuit model. Our model provides accurate frequency responses and allows clear identification of different contributions.

引用

页数：3

共 4 条

[1] A 40 Gb/s Monolithically Integrated Linear Photonic Receiver in a 0.25 μm BiCMOS SiGe:C Technology [J].

Awny, Ahmed ;

Nagulapalli, Rajasekhar ;

Winzer, Georg ;

Kroh, Marcel ;

Micusik, Daniel ;

Lischke, Stefan ;

Knoll, Dieter ;

Fischer, Gunter ;

Kissinger, Dietmar ;

Ulusoy, Ahmet Cagri ;

Zimmermann, Lars .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2015, 25 (07) :469-471

[2]

Lee J.-M., 2014, P MWP APMP, P139

[3] High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode [J].

Lischke, Stefan ;

Knoll, Dieter ;

Mai, Christian ;

Zimmermann, Lars ;

Peczek, Anna ;

Kroh, Marcel ;

Trusch, Andreas ;

Krune, Edgar ;

Voigt, Karsten ;

Mai, A. .

OPTICS EXPRESS, 2015, 23 (21) :27213-27220

[4]

Zimmermann L., 2015, P OPT FIB COMM C, P1

← 1 →