Deposition and etching of SiF2 on Si surface: MD study

被引：3
作者：
Chen, X. [1 ]
Lu, X. [2 ]
He, P. [2 ,3 ]
Zhao, C. [2 ,3 ]
Sun, W. [1 ]
Zhang, P. [2 ]
Gou, F. [1 ,4 ]
机构：
[1] Minist Educ, Key Lab Radiat Phys & Technol, Chengdu 610064, Peoples R China
[2] Guizhou Univ, Inst Plasma Surface Interact, Guiyang, Peoples R China
[3] Guizhou Univ, Coll sci, Guiyang, Peoples R China
[4] FOM Inst Plasma Phys, Nieuwegein, Netherlands
来源：
18TH INTERNATIONAL VACUUM CONGRESS (IVC-18) | 2012年 / 32卷
关键词：
Surface; Plasma etching; Silicon; Molecule dynamics; Ion-bombardment; MOLECULAR-DYNAMICS; SILICON; SIMULATION; CARBON;
D O I：
10.1016/j.phpro.2012.03.652
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Molecular dynamics simulations were performed to investigate SiF2 continuously bombarding the amorphous silicon surface with energies of 10, 50 and 100 eV at normal incidence at 300 K. With increasing incident energy, the deposition rate and etch rate increases. In the deposited amorphous films, SiF species is dominant. With increasing incident energy, the fraction of SiF2 decreases, while the fraction of SiF3 in the film increases. (c) 2012 Published by Elsevier B.V. Selection and/or peer review under responsibility of Chinese Vacuum Society (CVS).
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页码：885 / 890
页数：6
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