Investigations of Structural, Electronic, and Half-metallic Ferromagnetic Properties in (Al, Ga, In)1-x M x N (M = Fe, Mn) Diluted Magnetic Semiconductors

被引：45

作者：

Doumi, B. ^{[1
]}

Tadjer, A. ^{[1
]}

Dahmane, F. ^{[1
]}

Mesri, D. ^{[1
]}

Aourag, H. ^{[2
]}

机构：

[1] Djillali Liabes Univ Sidi Bel Abbes, Dept Phys, Modelling & Simulat Mat Sci Lab, Sidi Bel Abbes 22000, Algeria

[2] Univ Abou Bekr Belkaid Tlemcen, URMER, LEPM, Tilimsen 13000, Algeria

来源：

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2013年 / 26卷 / 03期

关键词：

Spintronics; Half-metals; Double-exchange mechanism; (Fe; Mn) doped III-V nitrides; MATERIAL DESIGN; SPINTRONICS; 1ST-PRINCIPLES; PERSPECTIVE; SPIN; ALN;

D O I：

10.1007/s10948-012-1808-6

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the structural, electronic, and magnetic properties of (M = Fe, Mn)-based zinc blende diluted magnetic semiconductors (DMS) (Al, Ga, In)(1-x) M (x) N for (x=0.0625,0.125,0.25), using first-principles calculations with the full-potential linearized augmented plane waves (FP-LAPW) method within the density functional theory and local spin-density approximation. The analysis of electronic structures and magnetic properties show that (Al, Ga, In)(1-x) Fe (x) N at (x=0.0625,0.125,0.25) are magnetic insulators, and In1-x Mn (x) N at (x=0.0625,0.125) are metallic in nature. On the other hand the (Al, Ga)(1-x) Mn (x) N at (x=0.0625,0.125,0.25) and In0.75Mn0.25N are half-metallic ferromagnets with magnetic spin polarization of 100 %, where the ferromagnetic ground states result from a double-exchange mechanism, and these compounds are predicted to be good candidates for spintronic applications.

引用

页码：515 / 525

页数：11

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