Axial SiGe Heteronanowire Tunneling Field-Effect Transistors

被引：34

作者：

Le, Son T. ^{[1
,2
]}

Jannaty, P. ^{[1
,2
]}

Luo, Xu ^{[1
,2
]}

Zaslavsky, A. ^{[1
,2
]}

Perea, Daniel E. ^{[3
]}

Dayeh, Shadi A. ^{[4
,5
]}

Picraux, S. T. ^{[4
]}

机构：

[1] Brown Univ, Dept Phys, Providence, RI 02912 USA

[2] Brown Univ, Sch Engn, Providence, RI 02912 USA

[3] Pacific NW Natl Lab, Environm & Mol Sci Lab, Richland, WA 99352 USA

[4] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA

[5] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

NANO LETTERS | 2012年 / 12卷 / 11期

基金：

美国国家科学基金会;

关键词：

SiGe heteronanowire; tunneling field effect transistor; axial heterojunction; VLS growth; SILICON; GROWTH;

D O I：

10.1021/nl3032058

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present silicon-compatible trigated p-Ge/i-Si/n-Si axial heteronanowire tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our TFETs have high I-ON similar to 2 mu A/mu m, fully suppressed ambipolarity, and a subthreshold slope SS similar to 140 mV/decade over 4 decades of current with lowest SS similar to 50 mV/decade. Device operation in the tunneling mode is confirmed by three-dimensional TCAD simulation. Interestingly, in addition to the TFET mode, our devices work as standard nanowire FETs with a good I-ON/I-OFF ratio when the source-drain junction is forward-biased. The improved transport in both biasing modes confirms the benefits of utilizing bandgap engineered axial nanowires for enhancing device performance.

引用

页码：5850 / 5855

页数：6

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