Structural properties of InN films grown on O-face ZnO(000(1)over-bar) by plasma-assisted molecular beam epitaxy

被引：20

作者：

Cho, YongJin ^{[1
]}

Brandt, Oliver ^{[1
]}

Korytov, Maxim ^{[2
]}

Albrecht, Martin ^{[2
]}

Kaganer, Vladimir M. ^{[1
]}

Ramsteiner, Manfred ^{[1
]}

Riechert, Henning ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] Leibniz Inst Kristallzuchtung, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 15期

关键词：

INDIUM NITRIDE FILMS; FUNDAMENTAL-BAND GAP; ZNO SUBSTRATE; ZINC-OXIDE; THIN-FILMS; C-FACE; RAMAN;

D O I：

10.1063/1.3702572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the impact of substrate temperature and layer thickness on the morphological and structural properties of InN films directly grown on O-face ZnO(000 (1) over bar) substrates by plasma-assisted molecular beam epitaxy. With increasing substrate temperature, an interfacial reaction between InN and ZnO takes place that eventually results in the formation of cubic In2O3 and voids. The properties of the InN films, however, are found to be unaffected by this reaction for substrate temperatures less than 550 degrees C. In fact, both the morphological and the structural quality of InN improve with increasing substrate temperature in the range from 350 to 500 degrees C. High quality films with low threading dislocation densities are demonstrated. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3702572]

引用

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