Impact of self-heating effect on hot carrier degradation in high-voltage LDMOS

被引：14

作者：

Cheng, Chih-Chang ^{[1
]}

Lin, J. F. ^{[1
]}

Wang, Tahui ^{[1
]}

Hsieh, T. H. ^{[2
]}

Tzeng, J. T. ^{[2
]}

Jong, Y. C. ^{[2
]}

Liou, R. S. ^{[2
]}

Pan, Samuel C. ^{[2
]}

Hsu, S. L. ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Taiwan Semiconductor Mfg Co, Sci Based Industrial Park, Hsinchu, Taiwan

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

TECHNOLOGY;

D O I：

10.1109/IEDM.2007.4419090

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Self-heating induced transient hot carrier effects in high-voltage n-LDMOS are investigated. A novel LDMOS structure incorporating a metal contact in the bird's beak region is fabricated, which allows us to probe an internal voltage transient in hot carrier stress. The AC stress-frequency dependence of device degradation is characterized and evaluated by a two-dimensional numerical simulation. Our result shows that drain current degradation in AC stress is more serious than in DC stress because of the reduction. of self-heating effect.

引用

页码：881 / +

页数：2

共 6 条

[1]

ARNOLD E, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P813, DOI 10.1109/IEDM.1994.383300

[2]

Cheng CC, 2006, INT RELIAB PHY SYM, P334

[3] Physics and characterization of various hot-carrier degradation modes in LDMOS by using a three-region charge-pumping technique [J].

Cheng, Chih-Chang ;

Lin, J. F. ;

Wang, Tahui ;

Hsieh, T. H. ;

Tzeng, J. T. ;

Jong, Y. C. ;

Liou, R. S. ;

Pan, Samuel C. ;

Hsu, S. L. .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2006, 6 (03) :358-363

[4] THE EFFECT OF TEMPERATURE ON LATERAL DMOS TRANSISTORS IN A POWER IC TECHNOLOGY [J].

DOLNY, GM ;

NOSTRAND, GE ;

HILL, KE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (04) :990-995

[5] High-voltage power integrated circuit technology using SOI for driving plasma display panels [J].

Kim, J ;

Roh, TM ;

Kim, SG ;

Song, QS ;

Lee, DW ;

Koo, JG ;

Cho, KI ;

Ma, DS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (06) :1256-1263

[6] High-performance 15-V novel LDMOS transistor architecture in a 0.25-μm BiCMOS process for RF-power applications [J].

Muller, D. ;

Giry, A. ;

Judong, F. ;

Rossato, C. ;

Blanchet, F. ;

Szelag, B. ;

Aguirre, A. Monroy ;

Sommet, R. ;

Pache, D. ;

Noblanc, O. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (04) :861-868

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