Novel Total Dose and Heavy-Ion Charge Collection Phenomena in a New SiGe HBT on Thin-Film SOI Technology

被引：8

作者：

Bellini, Marco ^{[1
]}

Phillips, Stanley D. ^{[1
]}

Diestelhorst, Ryan M. ^{[1
]}

Cheng, Peng ^{[1
]}

Cressler, John D. ^{[1
]}

Marshall, Paul W. ^{[2
]}

Turowski, Marek ^{[3
]}

Avenier, Gregory ^{[4
]}

Chantre, Alain ^{[4
]}

Chevalier, Pascal ^{[4
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[3] CFD Res Corp, Huntsville, AL 35805 USA

[4] STMicroelectronics, F-38926 Crolles, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2008年 / 55卷 / 06期

关键词：

C-SiGe; Heterojunction bipolar transistors; radiation effects; SiGe HBT; silicon-on-insulator (SOI); TCAD;

D O I：

10.1109/TNS.2008.2005108

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate radiation-induced effects on the DC, AC and thermal characteristics of high-performance SiGe HBTs fabricated on thin-film SOL TCAD simulations indicate novel heavy-ion charge collection phenomena resulting from the unique (CBEC)-C-B device layout of this technology platform.

引用

页码：3197 / 3201

页数：5

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