Hole-blocking titanium-oxide/silicon heterojunction and its application to photovoltaics

被引：195

作者：

Avasthi, Sushobhan ^{[1
]}

McClain, William E. ^{[1
,2
]}

Man, Gabriel ^{[1
,3
]}

Kahn, Antoine ^{[1
,3
]}

Schwartz, Jeffrey ^{[1
,2
]}

Sturm, James C. ^{[1
,3
]}

机构：

[1] Princeton Univ, Princeton Inst Sci & Technol Mat PRISM, Princeton, NJ 08544 USA

[2] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA

[3] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 20期

基金：

美国国家科学基金会; 加拿大自然科学与工程研究理事会;

关键词：

SOLAR-CELLS; SILICON; DIOXIDE; LAYER; DEPOSITION; BARRIERS; SI;

D O I：

10.1063/1.4803446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In contrast to the numerous reports on narrow-bandgap heterojunctions on silicon, such as strained Si1-xGex on silicon, there have been very few accounts of wide-bandgap semiconducting heterojunctions on silicon. Here, we present a wide-bandgap heterojunction-between titanium oxide and crystalline silicon-where the titanium oxide is deposited via a metal-organic chemical vapor deposition process at substrate temperatures of only 80-100 degrees C. The deposited films are conformal and smooth at the nanometer scale. Electrically, the TiO2/Si heterojunction prevents transport of holes while allowing transport of electrons. This selective carrier blocking is used to demonstrate a low-temperature processed silicon solar cell. (C) 2013 AIP Publishing LLC

引用

页数：4

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