Hole-blocking titanium-oxide/silicon heterojunction and its application to photovoltaics

被引：193
作者：
Avasthi, Sushobhan [1 ]
McClain, William E. [1 ,2 ]
Man, Gabriel [1 ,3 ]
Kahn, Antoine [1 ,3 ]
Schwartz, Jeffrey [1 ,2 ]
Sturm, James C. [1 ,3 ]
机构：
[1] Princeton Univ, Princeton Inst Sci & Technol Mat PRISM, Princeton, NJ 08544 USA
[2] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA
[3] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 20期
基金：
美国国家科学基金会; 加拿大自然科学与工程研究理事会;
关键词：
SOLAR-CELLS; SILICON; DIOXIDE; LAYER; DEPOSITION; BARRIERS; SI;
D O I：
10.1063/1.4803446
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In contrast to the numerous reports on narrow-bandgap heterojunctions on silicon, such as strained Si1-xGex on silicon, there have been very few accounts of wide-bandgap semiconducting heterojunctions on silicon. Here, we present a wide-bandgap heterojunction-between titanium oxide and crystalline silicon-where the titanium oxide is deposited via a metal-organic chemical vapor deposition process at substrate temperatures of only 80-100 degrees C. The deposited films are conformal and smooth at the nanometer scale. Electrically, the TiO2/Si heterojunction prevents transport of holes while allowing transport of electrons. This selective carrier blocking is used to demonstrate a low-temperature processed silicon solar cell. (C) 2013 AIP Publishing LLC
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