Honeycomb-like NiCo2O4@Ni(OH)2 supported on 3D N - doped graphene/carbon nanotubes sponge as an high performance electrode for Supercapacitor

被引:43
作者
Tong, Hao [1 ]
Yue, Shihong [1 ]
Jin, Fengqiao [1 ]
Lu, Liang [1 ]
Meng, Qing [1 ]
Zhang, Xiaogang [1 ]
机构
[1] Nanjing Univ Aeronaut & Astronaut, Inst Coll Mat Sci & Engn, Dept Jiangsu Key Lab Mat & Technol Energy Convers, Nanjing 210016, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
Supercapacitor; NiCo2O4; Ni(OH)(2); Graphene; Carbon nanotubes sponge; ASYMMETRIC SUPERCAPACITORS; ENERGY-STORAGE; NANOSHEET NETWORKS; CARBON; CAPACITANCE; ARRAYS; FOAM; PSEUDOCAPACITORS; NANOSTRUCTURES; NI(OH)(2);
D O I
10.1016/j.ceramint.2017.11.078
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In order to increase the energy density of supercapacitor, a new kind electrode material with excellent structure and outstanding electrochemical performance is highly desired. In this article, a new type of three-dimensional (3D) nitrogen-doped single-wall carbon nanotubes (SWNTs)/graphene elastic sponge (TRGN - CNTs - S) with low density of 0.8 mg cm(-3) has been successfully prepared by pyrolyzing SWNTs and GO coated commercial polyurethane (PU) sponge. In addition, high performance electrode of the honeycomb-like NiCo2O4@Ni(OH)(2)/TRGN-CNTs-S with core-shell structure has been successfully fabricated through hydrothermal method and then by annealing treatment and electrochemical deposition method, respectively. Benefited from 3D structural feature, the compressed NiCo2O4@Ni(OH)(2)/TRGN-CNTs-S electrode exhibits high gravimetric and volumetric capacitance of 1810 F g(-1), 847.7 F cm(-3) at 1 A g(-1). The high rate performance and long-term stability was also obtained. Furthermore, an asymmetric supercapacitor using NiCo2O4@Ni(OH)(2)/TRGN-CNTs-S cathode and NGN/CNTs anode delivered high gravimetric and volumetric energy density of 54 W h kg(-1) at 799.9 W kg(-1) and 37 W h L-1 at 561.5 W L-1. In summary, an excellent electrochemical electrode with new elastic 3D SWNTs/graphene supports and binder free pseudocapacitive materials was introduced.
引用
收藏
页码:3113 / 3121
页数:9
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