A Comprehensive Study of the Short-circuit Characteristics of SiC MOSFETs

被引：0
|
作者：
Qin, Haihong [1 ]
Dong, Yaowen [1 ]
Xu, Kefeng [1 ]
Xu, Huajuan [1 ]
Fu, Dafeng [1 ]
Wang, Shishan [1 ]
Zhao, Chaohui [2 ]
机构：
[1] Nanjing Univ Aeronaut & Astronaut, Ctr More Elect Aircraft Power Syst, Nanjing, Jiangsu, Peoples R China
[2] Shanghai DianJi Univ, Shanghai, Peoples R China
来源：
PROCEEDINGS OF THE 2017 12TH IEEE CONFERENCE ON INDUSTRIAL ELECTRONICS AND APPLICATIONS (ICIEA) | 2017年
基金：
中国国家自然科学基金;
关键词：
Silicon Carbide; MOSFET; Short-circuit Characteristics; Short-circuit Protection;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The short-circuit capability of power devices is one of the key issues that related to the reliability and safety of Silicon Carbide (SiC) power devices. Firstly, two types of short-circuit faults are introduced, and mechanism of short-circuit current is analyzed in detail. Then, the influence of different circuit parameters on characteristics of SiC MOSFET under short-circuit condition is analyzed and compared. The key factors influencing the short-circuit characteristics are further revealed, providing a guidance for designing short-circuit protection circuit of SiC MOSFET to some extent.
引用
收藏
页码：332 / 336
页数：5
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