A Comprehensive Study of the Short-circuit Characteristics of SiC MOSFETs

被引：0

作者：

Qin, Haihong ^{[1
]}

Dong, Yaowen ^{[1
]}

Xu, Kefeng ^{[1
]}

Xu, Huajuan ^{[1
]}

Fu, Dafeng ^{[1
]}

Wang, Shishan ^{[1
]}

Zhao, Chaohui ^{[2
]}

机构：

[1] Nanjing Univ Aeronaut & Astronaut, Ctr More Elect Aircraft Power Syst, Nanjing, Jiangsu, Peoples R China

[2] Shanghai DianJi Univ, Shanghai, Peoples R China

来源：

PROCEEDINGS OF THE 2017 12TH IEEE CONFERENCE ON INDUSTRIAL ELECTRONICS AND APPLICATIONS (ICIEA) | 2017年

基金：

中国国家自然科学基金;

关键词：

Silicon Carbide; MOSFET; Short-circuit Characteristics; Short-circuit Protection;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The short-circuit capability of power devices is one of the key issues that related to the reliability and safety of Silicon Carbide (SiC) power devices. Firstly, two types of short-circuit faults are introduced, and mechanism of short-circuit current is analyzed in detail. Then, the influence of different circuit parameters on characteristics of SiC MOSFET under short-circuit condition is analyzed and compared. The key factors influencing the short-circuit characteristics are further revealed, providing a guidance for designing short-circuit protection circuit of SiC MOSFET to some extent.

引用

页码：332 / 336

页数：5

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