Performance characterization of III-V power devices

被引：0
作者：
Stopel, A. [1 ]
Leibovitch, M. [1 ]
Shapira, Yoram [1 ]
机构：
[1] Tel Aviv Univ, Sch Elect Engn, IL-69978 Ramat Aviv, Israel
来源：
MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 09期
关键词：
power transistor; high power amplifier; power performance; breakdown; impact ionization;
D O I：
10.1016/j.mee.2008.05.033
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The power performance of GaAs/AlGaAs pseudomorphic high electron mobility transistors (PHEMTs) has been modeled by using the statistical Design of Experiment approach. Empirical models for the small signal gain, output power and power added efficiency have been developed. The "walk-out/in" phenomenon has been observed in the devices as a result of power measurements. The evolution of surface photovoltage spectra after RF power stress indicates accumulation of positive electrical charge in the buffer and the surface layer of the devices. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1872 / 1877
页数：6
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