Dielectric and Raman scattering studies of Bi2WO6 single crystals

被引:20
作者
Kania, Antoni [1 ]
Niewiadomski, Adrian [1 ]
Kugel, Godefroy E. [2 ,3 ]
机构
[1] Univ Silesia, A Chelkowski Inst Phys, PL-40007 Katowice, Poland
[2] Univ Metz, LMPOS, F-57070 Metz, France
[3] Supelec Metz, F-57070 Metz, France
关键词
bismuth tungstate; Bi2WO6; crystal growth; dielectric properties; Raman scattering; soft mode; BISMUTH TUNGSTATE; FLUX GROWTH;
D O I
10.1080/01411594.2012.715295
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Bi2WO6 single crystals were grown by a flux method using two solvents: NaVO3B2O3 and NaWO4. Dielectric studies were performed in the temperature range from 110 to 940?K. They showed that dielectric permittivity along the ferroelectric axis shows slight dispersion, increases with increasing temperature and reaches local maximum related to the P21 abB2cb phase transition at 933?K. In the direction perpendicular to the polar axis, there is no dielectric dispersion and dielectric permittivity decreases monotonically with the increase in temperature. Polarised Raman experiments were performed in the temperature range from 17 to 873?K. Based on the model of independent oscillators, frequencies and damping (full width at half maximum FWHM) of the Raman lines were calculated. Temperature dependences of Raman line frequencies showed that modes at 57, 77, 83, 102 and 150?cm-1 exhibit soft mode behaviour.
引用
收藏
页码:290 / 300
页数:11
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