Secondary electron imaging of nonconductors with nanometer resolution

被引:27
作者
Toth, M
Knowles, WR
Thiel, BL
机构
[1] FEI Co, Newburyport, MA 01950 USA
[2] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA
关键词
D O I
10.1063/1.2161571
中图分类号
O59 [应用物理学];
学科分类号
摘要
The resolution of secondary electron (SE) images in scanning electron microscopy (SEM) is limited by the SE diffusion length. However, most materials are poor electrical conductors and in practice, resolution and image information content are often limited by charging. We demonstrate how charging can be eliminated as the resolution-limiting factor using a gaseous SE detector for magnetic immersion electron lenses. Charging is stabilized by ions produced in a magnetic field-assisted gas ionization cascade. The charge control self-regulation process does not quench the SE imaging signal, thereby enabling high resolution image contrast mechanisms that are suppressed in high vacuum SEM.
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页码:1 / 3
页数:3
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