High-Performance Metal-Insulator-Metal Capacitors Using Europium Oxide as Dielectric

被引：17
作者：
Padmanabhan, Revathy [1 ,2 ]
Bhat, Navakanta [1 ,2 ]
Mohan, S. [2 ]
机构：
[1] Indian Inst Sci, Dept Elect Commun Engn, Bangalore 560012, Karnataka, India
[2] Indian Inst Sci, Ctr Nano Sci & Engn CeNSE, Bangalore 560012, Karnataka, India
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 05期
关键词：
Eu2O3; metal-insulator-metal (MIM); voltage coefficient of capacitance (VCC); DENSITY MIM CAPACITORS; FUNCTION NI ELECTRODE; PLASMA TREATMENT; LEAKAGE CURRENT; IMPROVEMENT; HFO2;
D O I：
10.1109/TED.2012.2188329
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the first demonstration of metal-insulator-metal (MIM) capacitors with Eu2O3 dielectric for analog and DRAM applications. The influence of different anneal conditions on the electrical characteristics of the fabricated MIM capacitors is studied. FG anneal results in high capacitance density (7 fF/mu m(2)), whereas oxygen anneal results in low quadratic voltage coefficient of capacitance (VCC) (194 ppm/V-2 at 100 kHz), and argon anneal results in low leakage current density (3.2 x 10(-8) A/cm(2) at -1 V). We correlate these electrical results with the surface chemical states of the films through X-ray photoelectron spectroscopy measurements. In particular, FG anneal and argon anneal result in sub-oxides, which modulate the electrical properties.
引用
收藏
页码：1364 / 1370
页数：7
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